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BLV640 |
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| Part Number | BLV640 |
| Manufacturer | BELLING |
| Description | This advanced low voltage MOSFET is produced using Belling’s proprietary MOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise not... |
| Features |
A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
http://www.belling.com.cn
-1Total 6 Pages
2008.08.08
BLV640
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance(note3) Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total Gate Charge Gate-Source Charge Gate-Drain Charge
VGS=... |
| Document |
 BLV640 Data Sheet
PDF 433.15KB |
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