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BLV2N60 |
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| Part Number | BLV2N60 |
| Manufacturer | SHANGHAI BELLING |
| Description | This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise n... |
| Features |
x.
http://www.belling.com.cn
-1Total 6 Pages
Value 5.5 62.5
Units V V A A A W
W/℃ mJ A mJ oC oC
Units ℃/ W ℃/ W
2008.08.08
BLV2N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
VGS=0V, ID=250uA Reference to 25℃, ID=250 uA
VGS=10V, ID=1A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transcond... |
| Document |
 BLV2N60 Data Sheet
PDF 456.36KB |
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