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BLV730 |
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| Part Number | BLV730 |
| Manufacturer | BELLING |
| Description | This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise n... |
| Features |
Max. Max. Value 1.7 62.5 Units ℃/ W ℃/ W
http://www.belling.com.cn Page 1/6
3/28/2007
http://www.Datasheet4U.com
BLV730
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance(note3) Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total Gate Charge Gate-Source Charge Gate-Drain Charge T... |
| Document |
 BLV730 Data Sheet
PDF 528.33KB |
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