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N-channel MOSFET and benefits Very fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Swi |
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nexperia |
P-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed line driv |
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nexperia |
N-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed li |
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nexperia |
P-channel MOSFET and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications • Relay dr |
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nexperia |
P-channel MOSFET and benefits • Low leakage current • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.48 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 1.02 Ω 3. A |
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nexperia |
P-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profile of 0.37 mm height 3. Applications • Relay driver • High-speed line driver • High |
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nexperia |
N-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side lo |
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nexperia |
N-channel MOSFET and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side loa |
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nexperia |
N-channel MOSFET and benefits • Trench MOSFET technology • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • Relay driver • High-spe |
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nexperia |
N-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed l |
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nexperia |
single P-channel Trench MOSFET and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.37 mm 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching c |
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nexperia |
N-channel MOSFET and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • |
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nexperia |
N-channel MOSFET and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • |
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nexperia |
N-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed li |
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nexperia |
P-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed l |
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nexperia |
P-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed |
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nexperia |
N-channel MOSFET and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed l |
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nexperia |
N-channel MOSFET and benefits • Trench MOSFET technology • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • Relay driver • High-spe |
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nexperia |
N-channel MOSFET and benefits • Low leakage current • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • Relay driver • High-speed li |
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nexperia |
N-channel MOSFET and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side loa |
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Desde 2024. D4U Semiconductor.
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