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PMZ350UPE |
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| Part Number | PMZ350UPE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
| Features |
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -1.4 A Static characteristics RDSon drain-source on... |
| Document |
 PMZ350UPE Data Sheet
PDF 695.45KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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