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| Part Number | PMZ350UPE |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PMZ350UPE |
| Manufacturer | nexperia |
| Title | P-channel MOSFET |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discha. |
| Features |
and benefits
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min T. |
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| 1 | PMZ350XN |
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| 8 | PMZ1000UN |
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| 9 | PMZ1200UPE |
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| 10 | PMZ1200UPE |
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Desde 2024. D4U Semiconductor.
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