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PMZB150UNE |
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| Part Number | PMZB150UNE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be... |
| Features |
• Very fast switching • Low threshold voltage • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection: 2 kV HBM • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C Min Typ Max Unit - - 20 V -8 - 8V [... |
| Document |
 PMZB150UNE Data Sheet
PDF 709.75KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PMZB150UNE |
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N-channel Trench MOSFET |
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| 2 | PMZB1200UPE |
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| 3 | PMZB1200UPE |
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| 4 | PMZB200UNE |
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Desde 2024. D4U Semiconductor.
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