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| Part Number | PMZB1200UPE |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PMZB1200UPE |
| Manufacturer | NXP |
| Title | P-channel Trench MOSFET |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Disc. |
| Features |
and benefits
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profile of 0.37 mm height 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-s. |
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Desde 2024. D4U Semiconductor.
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