PMZB1200UPE |
Part Number | PMZB1200UPE |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be... |
Features |
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profile of 0.37 mm height 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -410 mA; Tj = 25 °C [1] Min Typ Max Unit - - ... |
Document |
PMZB1200UPE Data Sheet
PDF 703.21KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PMZB1200UPE |
NXP |
P-channel Trench MOSFET | |
2 | PMZB150UNE |
NXP |
N-channel Trench MOSFET | |
3 | PMZB150UNE |
nexperia |
N-channel MOSFET | |
4 | PMZB200UNE |
NXP |
N-channel Trench MOSFET | |
5 | PMZB200UNE |
nexperia |
N-channel MOSFET | |
6 | PMZB290UN |
NXP Semiconductors |
single N-channel Trench MOSFET |