PMZ320UPE |
Part Number | PMZ320UPE |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
Features |
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -1 A; Tj = 25 °C Min Typ Max ... |
Document |
PMZ320UPE Data Sheet
PDF 709.93KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PMZ320UPE |
NXP |
P-channel Trench MOSFET | |
2 | PMZ350UPE |
NXP |
P-channel Trench MOSFET | |
3 | PMZ350UPE |
nexperia |
P-channel MOSFET | |
4 | PMZ350XN |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
5 | PMZ370UNE |
NXP |
N-channel Trench MOSFET | |
6 | PMZ390UN |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |