PMZ1200UPE nexperia P-channel MOSFET Datasheet. existencias, precio

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PMZ1200UPE

nexperia
PMZ1200UPE
PMZ1200UPE PMZ1200UPE
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Part Number PMZ1200UPE
Manufacturer nexperia (https://www.nexperia.com/)
Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene...
Features
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm 3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -410 mA; Tj = 25 °C [1] Min Typ Max ...

Document Datasheet PMZ1200UPE Data Sheet
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