PMZ1200UPE |
Part Number | PMZ1200UPE |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
Features |
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -410 mA; Tj = 25 °C [1] Min Typ Max ... |
Document |
PMZ1200UPE Data Sheet
PDF 704.78KB |
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