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PMZB370UNE |
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| Part Number | PMZB370UNE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and b... |
| Features |
Very fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C [1] Min Typ Max Unit - - 30 V -8 - 8V - - 900 mA... |
| Document |
 PMZB370UNE Data Sheet
PDF 1.49MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZB370UNE |
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MOSFET |
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| 2 | PMZB300XN |
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single N-channel Trench MOSFET |
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| 3 | PMZB320UPE |
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| 4 | PMZB320UPE |
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| 5 | PMZB350UPE |
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| 6 | PMZB350UPE |
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P-channel MOSFET |
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Desde 2024. D4U Semiconductor.
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