Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | PMZB350UPE |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PMZB350UPE |
| Manufacturer | nexperia |
| Title | P-channel MOSFET |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • 1.8 kV ESD protec. |
| Features |
and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • 1.8 kV ESD protected 1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZB300XN |
NXP Semiconductors |
single N-channel Trench MOSFET |
|
| 2 | PMZB320UPE |
NXP |
P-channel Trench MOSFET |
|
| 3 | PMZB320UPE |
nexperia |
P-channel MOSFET |
|
| 4 | PMZB370UNE |
NXP Semiconductors |
MOSFET |
|
| 5 | PMZB370UNE |
nexperia |
N-channel MOSFET |
|
| 6 | PMZB380XN |
NXP Semiconductors |
MOSFET |
|
| 7 | PMZB390UNE |
NXP |
N-channel Trench MOSFET |
|
| 8 | PMZB390UNE |
nexperia |
N-channel MOSFET |
|
| 9 | PMZB1200UPE |
NXP |
P-channel Trench MOSFET |
|
| 10 | PMZB1200UPE |
nexperia |
P-channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|