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PMZB350UPE |
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| Part Number | PMZB350UPE |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and b... |
| Features |
• Low threshold voltage • Very fast switching • Trench MOSFET technology • 1.8 kV ESD protected 1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -0.3 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max -20 8 -1.4 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 330 450 mΩ Device mounted on an FR4 Printed... |
| Document |
 PMZB350UPE Data Sheet
PDF 188.52KB |
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