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PMZB350UPE |
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| Part Number | PMZB350UPE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and b... |
| Features |
• Low threshold voltage • Very fast switching • Trench MOSFET technology • 1.8 kV ESD protected 1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -1.4 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -0.3 A; Tj = 25 °C resistance - 330 450 mΩ [1] Device mounted on an... |
| Document |
 PMZB350UPE Data Sheet
PDF 695.84KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PMZB350UPE |
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| 2 | PMZB300XN |
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| 3 | PMZB320UPE |
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| 6 | PMZB370UNE |
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Desde 2024. D4U Semiconductor.
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