WillSEMI WNM Hoja de datos

No.	parte #	Fabricante	Descripción
1	WNM2077	WillSEMI	MOSFET ● Trench Technology ● Supper high density cell design ● Excellent ON resistance for higher DC current ● Extremely Low Threshold Voltage ● Small package SOT-723 Applications ● Driver for Relay, Solenoid, Motor, LED etc. ● DC-DC converter circuit ● Po
2	WNM3018	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  HBM ESD protection >2 kV  Small package SOT-323 Applications  Driver: Relay, Solenoid, Lamps,Hammers etc.  Power supply converters circuit  Lo
3	WNM2072	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN1006-3L Applications D GS Pin configuration (Top view) F F = Device Code * = Month (A~Z) Marki
4	WNM01N10	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23 Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging
5	WNM20N60SF	WillSEMI	MOSFET
6	WNMD2182	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN2.9×2.8-8L  ESD Protected Class-2 （HBM 2000V） Applications  Driver for Relay, Solenoid, Moto
7	WNMD2176	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23-6L Applications SOT-23-6L D1 S1 D2 6 54 1 23 G1 S2 G2 Pin configuration (Top view) 6 54 2176 NDYW 1 23 2176 N
8	WNMD2178	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN2X2-4L 34 2 1 Bottom View DFN2X2-4L 43 S2 G2 2178 NDYW S1 G1 12 4: Source 2 3: Gate 2 1: Sourc
9	WNMD2090	WillSEMI	MOSFET
10	WNMD2078	WillSEMI	MOSFET ● Trench Technology ● Supper high density cell design ● Excellent ON resistance for higher DC current ● Extremely Low Threshold Voltage ● Small package SOT-363 Applications ● Driver for Relay, Solenoid, Motor, LED etc. ● DC-DC converter circuit ● Pow
11	WNM3025	WillSEMI	MOSFET GS  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package DFN1006-3L Applications  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable de
12	WNM6002	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-323 Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Pow
13	WNM3019	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  HBM ESD protection >2 kV  Small package SOT-523 Applications  Driver: Relay, Solenoid, Lamps,Hammers etc.  Power supply converters circuit  Lo
14	WNM2310	WillSEMI	MOSFET
15	WNM3017	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package DFN2x2-6L Applications  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device
16	WNM2046C	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package DFN1006-3L Applications  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device
17	WNM01N11	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Chargi
18	WNM05N60F	WillSEMI	MOSFET
19	WNM2046B	WillSEMI	MOSFET  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN1006-3L Applications D GS Pin configuration (Top view) 6 = Device Code * = Month (A~Z) Marking
20	WNM05N60	WillSEMI	MOSFET