Busque con el número de pieza junto con el fabricante o la descripción
WNM3025 |
Click to view a larger image
| Part Number | WNM3025 |
| Manufacturer | WillSEMI |
| Description | The WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-D... |
| Features |
GS
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package DFN1006-3L Applications DC/DC converters Power supply converters circuit Load/Power Switching for portable device Pin configuration (Top view) J = Device Code * = Month(A~z) Marking Order information Device Package Shipping WNM3025-3/TR DFN1006-3L 10K/Tape&Reel Will Semiconductor Ltd. 1 2016/10/21- Rev.1.0 Absolute Maximum ratings Parameter Drain-Source ... |
| Document |
 WNM3025 Data Sheet
PDF 1.43MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WNM3003 |
Will Semiconductor |
N-Channel MOSFET |
|
| 2 | WNM3003 |
TY Semiconductor |
N-Channel MOSFET |
|
| 3 | WNM3008 |
Will Semiconductor |
N-Channel MOSFET |
|
| 4 | WNM3008 |
TY Semiconductor |
N-Channel MOSFET |
|
| 5 | WNM3011 |
Will Semiconductor |
N-Channel MOSFET |
|
| 6 | WNM3013 |
Will Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|