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WNM2046B |
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| Part Number | WNM2046B |
| Manufacturer | WillSEMI |
| Description | DFN1006-3L The WNM2046B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable ... |
| Features |
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package DFN1006-3L Applications D GS Pin configuration (Top view) 6 = Device Code * = Month (A~Z) Marking Small Signal Switching Small Moto Driver Order information Device WNM2046B-3/TR Package DFN1006-3L Shipping 10K/Reel&Tape Will Semiconductor Ltd. 1 Aug, 2014- Rev.1.0 Absolute Maximum ratings Parameter Drain-Source Volta... |
| Document |
 WNM2046B Data Sheet
PDF 1.37MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WNM2046 |
Will Semiconductor |
N-Channel MOSFET |
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| 2 | WNM2046C |
WillSEMI |
MOSFET |
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| 3 | WNM2016 |
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N-Channel MOSFET |
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| 4 | WNM2016 |
TY Semiconductor |
N-Channel Power MOSFET |
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| 5 | WNM2020 |
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N-Channel MOSFET |
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| 6 | WNM2020 |
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N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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