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WNMD2182 |
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| Part Number | WNMD2182 |
| Manufacturer | WillSEMI |
| Description | The WNMD2182 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use ... |
| Features |
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package PDFN2.9×2.8-8L ESD Protected Class-2 （HBM 2000V） Applications Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging Pin configuration (Top view) 8 765 2182 NDYW 1 23 4 2182 ND YW = Device Co... |
| Document |
 WNMD2182 Data Sheet
PDF 734.32KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WNMD2180 |
WillSEMI |
MOSFET |
|
| 2 | WNMD2153 |
Will Semiconductor |
Dual N-Channel MOSFET |
|
| 3 | WNMD2154 |
Will Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | WNMD2155 |
Will Semiconductor |
Dual N-Channel MOSFET |
|
| 5 | WNMD2156 |
Will Semiconductor |
Dual N-Channel MOSFET |
|
| 6 | WNMD2157 |
Will Semiconductor |
Dual N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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