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WNM01N11 |
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| Part Number | WNM01N11 |
| Manufacturer | WillSEMI |
| Description | The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC... |
| Features |
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Small package SOT-23-6L Applications Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging 1N11 = Device Code MA= Special Code YW= Year&Week Marking Order information Device Package Shipping WNM01N11-6/TR SOT-23-6L 3000/Reel&Tape Will Semiconductor Ltd. 1 2016/02/25 ... |
| Document |
 WNM01N11 Data Sheet
PDF 1.18MB |
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