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WNM3017 |
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| Part Number | WNM3017 |
| Manufacturer | WillSEMI |
| Description | The WNM3017 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-D... |
| Features |
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package DFN2x2-6L Applications DC/DC converters Power supply converters circuit Load/Power Switching for portable device Pin configuration (Top view) 3017 NM Y W = Device Code = Special Code = Year = Week(A~z) Marking Order information Device Package Shipping WNM3017-6/TR DFN2x2-6L 3000/Tape&Reel Will Semiconductor Ltd. 1 2016/03/07- Rev.1.1... |
| Document |
 WNM3017 Data Sheet
PDF 844.37KB |
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