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WNM3018 |
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| Part Number | WNM3018 |
| Manufacturer | WillSEMI |
| Description | The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in sma... |
| Features |
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current HBM ESD protection >2 kV Small package SOT-323 Applications Driver: Relay, Solenoid, Lamps,Hammers etc. Power supply converters circuit Load/Power Switching for potable device 18 = Device Code * = Month (A~Z) Marking Order information Device WMN3018-3/TR Package Shipping SOT-323 3000/Reel&Tape Will Semiconductor Ltd. 1 2015/8/10 – Rev. 1.0 Absolute Maximu... |
| Document |
 WNM3018 Data Sheet
PDF 681.97KB |
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