TE PTF Hoja de datos

No.	parte #	Fabricante	Descripción
1	PTF080901E	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Mo
2	PTF211301A	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42 dBc Typical CW performanc
3	PTFB182503EL	Infineon Technologies	Thermally-Enhanced High Power RF LDMOS FETs include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reli
4	PTF080451E	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body M
5	PTF210901	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P –1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated
6	PTFB183408SV	Infineon Technologies	High Power RF LDMOS Field Effect Transistor include input and output matching, high gain and thermally-enhanced package with earless ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-3
7	PTF080101	Infineon Technologies AG	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
8	PTF080451	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body M
9	PTF080601A	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Mod
10	PTF210301	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated
11	PTF210301E	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated
12	PTF210451	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 50 W - Linear gain = 14 dB - Effic
13	PTF210451E	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz • • Internal matching for wideband performance Typical two –carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc Typical CW performance - Output power at P –1dB = 50 W - Linear gain = 14 dB - Effic
14	PTF211802	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P –1dB = 180 W - Efficiency = 50% Integrate
15	PTF211802A	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P –1dB = 180 W - Efficiency = 50% Integrate
16	PTF211802E	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz • • Broadband internal matching Typical two –carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P –1dB = 180 W - Efficiency = 50% Integrate
17	PTFA	OPLINK	Plug Type Fixed Attenuator  Wide Attenuation Range  Low Return Loss  Low PDL nm ± 0.5 ± 10% 45 50 60 -40 85 °C dB dB dB 1310 ± 40 Operating Wavelength Range 0~5 dB Attenuation >5 dB Attenuation PC Type Return Loss Operating Temperature UPC Type APC Type 1550 ± 40 1625
18	PTFA191001F	Infineon Technologies	Thermally-Enhanced High Power RF LDMOS FET • • • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Inter
19	PTFM101T1A0	TE	Platinum Temperature Sensors
20	PTFM102C1A0	TE	Platinum Temperature Sensors