Inchange Semiconductor TIC Hoja de datos

No.	parte #	Fabricante	Descripción
1	TIC106D	Inchange Semiconductor	Thyristors t VAA=6V; RL=100Ω 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Holding current NOTICE： VAA=6V; RGK=1k Ω , IT= 10mA 5 mA ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati
2	TIC116D	Inchange Semiconductor	Thyristors A VTM On-state voltage ITM= 8A 1.7 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA Notice： ISC reserves the rights to make changes of th
3	TIC126M	Inchange Semiconductor	Thyristors M= 12A 1.4 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA isc website：www.iscsemi.cn 1 isc&iscsemi is registered trademark isc Thyristor
4	TIC206M	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM
5	TIC226D	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA
6	TIC106M	Inchange Semiconductor	Thyristors M=VDRM, Tj=110℃ 0.4 1.0 mA 0.4 1.0 mA VTM On-state voltage ITM= 5A 1.7 V IGT Gate-trigger current VAA=6V; RL=1kΩ 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Holding current VAA=6V; RGK=1kΩ, IT= 10mA 5 mA isc website：ww
7	TIC225D	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET
8	TIC226N	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA
9	TIC226M	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA
10	TIC225M	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET
11	TIC206D	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM
12	TIC106N	Inchange Semiconductor	Thyristors M=VDRM, Tj=110℃ 0.4 1.0 mA 0.4 1.0 mA VTM On-state voltage ITM= 5A 1.7 V IGT Gate-trigger current VAA=6V; RL=1kΩ 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Holding current VAA=6V; RGK=1kΩ, IT= 10mA 5 mA isc website：ww
13	TIC246D	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA
14	TIC126N	Inchange Semiconductor	Thyristors ℃ 2.0 mA VTM On-state voltage ITM= 12A 1.4 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA isc website：www.iscsemi.cn 1 isc&iscsemi is
15	TIC116M	Inchange Semiconductor	Thyristors j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor TIC116series MIN TYP MAX UNIT 3 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current
16	TIC246N	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA
17	TIC246M	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA
18	TIC216M	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM
19	TIC216D	Inchange Semiconductor	Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM
20	TIC126D	Inchange Semiconductor	Thyristors ℃ 2.0 mA VTM On-state voltage ITM= 12A 1.4 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA isc website：www.iscsemi.cn 1 isc&iscsemi is