TIC246N |
Part Number | TIC246N |
Manufacturer | Inchange Semiconductor |
Description | isc Triacs TIC246N FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe... |
Features |
·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 16 A ITSM Non-repetitive peak on-state current 125 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~125 ℃ Rth(j-c) Thermal resistance, junction to case ... |
Document |
TIC246N Data Sheet
PDF 162.77KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIC246 |
Power Innovations Limited |
SILICON TRIACS | |
2 | TIC246 |
INCHANGE |
Triac | |
3 | TIC246B |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
4 | TIC246C |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
5 | TIC246D |
Inchange Semiconductor |
Triacs | |
6 | TIC246D |
Power Innovations Limited |
SILICON TRIACS |