Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | TIC246 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | TIC246 |
| Manufacturer | INCHANGE |
| Title | Triac |
| Description | ·High current Triacs ·16A RMS ,125A Peak Current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA. |
| Features | ion to Ambient TYP MAX UNIT 1.9 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current Ⅰ VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ IGT Gate trigger current Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ IH Holding current Vsupply = 12 V†,IG= 0 initial . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC246B |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 2 | TIC246C |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 3 | TIC246D |
Inchange Semiconductor |
Triacs |
|
| 4 | TIC246D |
Power Innovations Limited |
SILICON TRIACS |
|
| 5 | TIC246D |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 6 | TIC246E |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 7 | TIC246M |
Inchange Semiconductor |
Triacs |
|
| 8 | TIC246M |
Power Innovations Limited |
SILICON TRIACS |
|
| 9 | TIC246M |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 10 | TIC246N |
Inchange Semiconductor |
Triacs |
|
Desde 2024. D4U Semiconductor.
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