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TIC106N |
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| Part Number | TIC106N |
| Manufacturer | Inchange Semiconductor |
| Description | isc Thyristors TIC106N APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
M=VDRM, Tj=110℃
0.4 1.0
mA
0.4 1.0
mA
VTM On-state voltage
ITM= 5A
1.7 V
IGT
Gate-trigger current
VAA=6V; RL=1kΩ
200 μA
VGT Gate-trigger voltage
VAA=6V; RL=100Ω
1.0 V
IH
Holding current
VAA=6V; RGK=1kΩ, IT= 10mA
5 mA
isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc Thyristors
TIC106N
Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general ... |
| Document |
 TIC106N Data Sheet
PDF 183.94KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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