TIC216M |
Part Number | TIC216M |
Manufacturer | Inchange Semiconductor |
Description | isc Triacs TIC216M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per... |
Features |
·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)TC=70℃ ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 600 600... |
Document |
TIC216M Data Sheet
PDF 162.23KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIC216 |
Power Innovations Limited |
SILICON TRIACS | |
2 | TIC216 |
INCHANGE |
Triac | |
3 | TIC216A |
Comset Semiconductors |
(TIC216x) SILICON TRIACS | |
4 | TIC216B |
Comset Semiconductors |
(TIC216x) SILICON TRIACS | |
5 | TIC216D |
Inchange Semiconductor |
Triacs | |
6 | TIC216D |
Bourns |
SILICON TRIACS |