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TIC126N |
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| Part Number | TIC126N |
| Manufacturer | Inchange Semiconductor |
| Description | isc Thyristors TIC126N APPLICATIONS ·12A contimunous on-state current ·100A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p... |
| Features |
℃
2.0 mA
VTM On-state voltage
ITM= 12A
1.4 V
IGT
Gate-trigger current
VAA=6V; RL=100Ω
20 mA
VGT Gate-trigger voltage
VAA=6V; RL=100Ω
1.5 V
IH
Holding current
VAA=6V; RGK=1kΩ,IT=100mA
40 mA
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Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in... |
| Document |
 TIC126N Data Sheet
PDF 160.96KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC126 |
Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS |
|
| 2 | TIC126A |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 3 | TIC126B |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 4 | TIC126C |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 5 | TIC126D |
Inchange Semiconductor |
Thyristors |
|
| 6 | TIC126D |
BOURNS |
SILICON CONTROLLED RECTIFIER |
|
Desde 2024. D4U Semiconductor.
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