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| Part Number | TIC126D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | TIC126D |
| Manufacturer | BOURNS |
| Title | SILICON CONTROLLED RECTIFIER |
| Description | TIC126 SERIES SILICON CONTROLLED RECTIFIERS 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical. |
| Features | e temperature range Storage temperature range VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg Lead temperature 1.6 mm from case for 10 seconds TL VALUE 400 600 700 800 400 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 UNIT V V A A A A W W °C °C °C NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 2. This. |
| Part Number | TIC126D |
| Manufacturer | Inchange Semiconductor |
| Title | Thyristors |
| Description | isc Thyristors TIC126D APPLICATIONS ·12A contimunous on-state current ·100A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetit. |
| Features | ℃ 2.0 mA VTM On-state voltage ITM= 12A 1.4 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA isc website：www.iscsemi.cn 1 isc&iscsemi is registered trademark Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor. |
| Part Number | TIC126D |
| Manufacturer | Comset Semiconductors |
| Title | P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
| Description | SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSO. |
| Features | C D E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 30/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Ratings Gate-controlled VAA = 30 V, RL = 6 Ω Turn-on time RGK(eff) = 100 Ω, Vin = 20 . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC126 |
Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS |
|
| 2 | TIC126A |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 3 | TIC126B |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 4 | TIC126C |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 5 | TIC126E |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 6 | TIC126M |
Inchange Semiconductor |
Thyristors |
|
| 7 | TIC126M |
BOURNS |
SILICON CONTROLLED RECTIFIER |
|
| 8 | TIC126M |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 9 | TIC126M |
Qidong Jilai |
12A SCR |
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| 10 | TIC126N |
Inchange Semiconductor |
Thyristors |
|
Desde 2024. D4U Semiconductor.
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