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| Part Number | TIC126N |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | TIC126N |
| Manufacturer | Comset Semiconductors |
| Title | P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
| Description | SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSO. |
| Features | C D E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 30/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Ratings Gate-controlled VAA = 30 V, RL = 6 Ω Turn-on time RGK(eff) = 100 Ω, Vin = 20 . |
| Part Number | TIC126N |
| Manufacturer | Qidong Jilai |
| Title | 12A SCR |
| Description | ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC126 Series(12A SCRS) TIC126 series 12A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 20mA TO-220 PACKAGE ABSOLUTE RATING Symbol Parameter VDRM Repetitive peak off-state voltage TIC126D TIC126. |
| Features | Rth(j-c) Junction to case thermal resistance Rtj(j-a) Junction to free air thermal resistance Value 2.4 62.5 Unit /W /W ELECTRICAL CHARACTERISTICS at 25 case temperature Symbol Testing conditions Min. Typ. Max. Unit IGT VGT IH VTM IDRM IRRM dv/dt VAA=6V, RL=100 , tp(g) 20 s VAA=6V, RL=100 , TC=-40 tp(g) 20 s RGK=1K VAA=6V, RL=100 , tp(g) 20 s RGK=1K VAA=6V, RL=100 , TC=110 tp(g) 20 s . |
| Part Number | TIC126N |
| Manufacturer | BOURNS |
| Title | SILICON CONTROLLED RECTIFIER |
| Description | TIC126 SERIES SILICON CONTROLLED RECTIFIERS 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) K 1 A 2 G 3 Pin 2 is in electrical. |
| Features | e temperature range Storage temperature range VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg Lead temperature 1.6 mm from case for 10 seconds TL VALUE 400 600 700 800 400 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 UNIT V V A A A A W W °C °C °C NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 2. This. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC126 |
Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS |
|
| 2 | TIC126A |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 3 | TIC126B |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 4 | TIC126C |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 5 | TIC126D |
Inchange Semiconductor |
Thyristors |
|
| 6 | TIC126D |
BOURNS |
SILICON CONTROLLED RECTIFIER |
|
| 7 | TIC126D |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 8 | TIC126D |
Qidong Jilai |
12A SCR |
|
| 9 | TIC126E |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 10 | TIC126M |
Inchange Semiconductor |
Thyristors |
|
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