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TIC226N |
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| Part Number | TIC226N |
| Manufacturer | Inchange Semiconductor |
| Description | isc Triacs TIC226N FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RMS) RMS on-state current (full sine wave)TC=85℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 1... |
| Document |
 TIC226N Data Sheet
PDF 162.55KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC226 |
BOURNS |
SILICON TRIACS |
|
| 2 | TIC226 |
INCHANGE |
Triac |
|
| 3 | TIC226A |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 4 | TIC226B |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 5 | TIC226C |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 6 | TIC226D |
BOURNS |
SILICON TRIACS |
|
Desde 2024. D4U Semiconductor.
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