Part Number | TIC226 |
Distributor | Stock | Price | Buy |
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Part Number | TIC226 |
Manufacturer | INCHANGE |
Title | Triac |
Description | ·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC226D 400 VDRM . |
Features | Case Rth j-a Thermal Resistance,Junction to Ambient TYP MAX UNIT 1.8 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current Ⅰ VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ IGT Gate trigger current Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ IH Holding. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIC225 |
BOURNS |
SILICON TRIACS | |
2 | TIC225 |
Power Innovations Limited |
SILICON TRIACS | |
3 | TIC225 |
INCHANGE |
Triac | |
4 | TIC225A |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
5 | TIC225B |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
6 | TIC225C |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
7 | TIC225D |
BOURNS |
SILICON TRIACS | |
8 | TIC225D |
Inchange Semiconductor |
Triacs | |
9 | TIC225D |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
10 | TIC225E |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |