Busque con el número de pieza junto con el fabricante o la descripción
TIC116M |
Click to view a larger image
| Part Number | TIC116M |
| Manufacturer | Inchange Semiconductor |
| Description | ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per... |
| Features |
j-a
Thermal Resistance,Junction to Ambient
INCHANGE Semiconductor
TIC116series
MIN TYP MAX UNIT 3 ℃/W
62.5 ℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IRRM IDRM
Repetitive peak reverse current Repetitive peak off-state current
VRM=VRRM,
VRM=VRRM, Tj=110℃
VDM=VDRM,
VDM=VDRM, Tj=110℃
VTM On-state voltage
ITM= 8A
IGT
Gate-trigger current
VAA=12V; RL=100Ω
VGT Gate-trigger voltage
VAA=12V; RL=100Ω
IH
Holding current
VAA=12V;IT= 100mA
MIN TYP. MAX UNIT
0.4 2.0
mA
0.4 2.0
mA
1.7 V
20 mA 1.5 V
40 mA
NOTICE： ISC reserves the ... |
| Document |
 TIC116M Data Sheet
PDF 181.28KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC116 |
Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS |
|
| 2 | TIC116A |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 3 | TIC116B |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 4 | TIC116C |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
| 5 | TIC116D |
Inchange Semiconductor |
Thyristors |
|
| 6 | TIC116D |
Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
Desde 2024. D4U Semiconductor.
|