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INCHANGE |
NPN Transistor ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter S |
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Inchange Semiconductor |
Silicon NPN Power Transistor fied SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0 VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Colle |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistor ctor-Emitter Breakdown Voltage IC= 5mA; IB= 0 30 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 10Ω 55 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 55 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 |
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Inchange Semiconductor |
Silicon NPN Power Transistor rademark 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N3053 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA ; |
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Inchange Semiconductor |
Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(on) Base-Emitter On Volt |
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INCHANGE |
NPN Transistor ning Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB= 0.2A hFE DC Current Gain *:Pulse test:Pulse width=300u |
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Inchange Semiconductor |
Silicon PNP Power Transistor ing Voltage IC=-200mA; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V hF |
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Inchange Semiconductor |
Silicon NPN Power Transistor Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 2V hFE-1 |
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Inchange Semiconductor |
Silicon NPN Power Transistor aining Voltage IC=10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 4V hFE DC Current Gain IC= 5A; VCE= 4V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 4V; f= 1.0MHz |
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Inchange Semiconductor |
Silicon PNP Power Transistor n Voltage IC= -3A; IB= -0.6A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; VCE=-0.6V ICEO Collector Cutoff Current VCE= -100V; IB=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -3A ; VCE= -3V 2N3198 MIN MAX UNIT |
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Inchange Semiconductor |
Silicon PNP Power Transistor ing Voltage IC=-200mA; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V hF |
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Inchange Semiconductor |
Silicon PNP Power Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= - |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistors rwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current ga |
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INCHANGE |
NPN Transistor te：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N3772 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50m |
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INCHANGE |
NPN Transistor S) * Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0 |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤4.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching an |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and |
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Inchange Semiconductor |
Silicon NPN Power Transistor aining Voltage IC=30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.33A VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 12V hFE DC Current Gain IC= 10A; VCE= 12V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 4V; f= 1. |
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Desde 2024. D4U Semiconductor.
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