Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2N3741 |
| Part Number | 2N3741 |
| Manufacturer | Motorola |
| Title | MEDIUM-POWER PNP TRANSISTORS |
| Description | 2N3740, A(SILICON) 2N3741, A MEDIUM-POWER PNP TRANSISTORS · .. ideal for use as drivers, switches and direct replacement of germanium medium·power devices. These devices feature: • Low Saturation Voltage - = = VCE(sat) 0.6 Vdc@ IC 1.0 Amp • High Gain Characteristics - hFE = 30-100@ IC = 250 mAdc • . |
| Features |
• Low Saturation Voltage - = = VCE(sat) 0.6 Vdc@ IC 1.0 Amp • High Gain Characteristics - hFE = 30-100@ IC = 250 mAdc • Direct Substitution for Germanium Equivalents • Excellent Safe Area Limits (See Figure 2) • Low Collector Cutoff Current - 100 nA (Max) 2N3740A, 2N3741A • Complementary to NPN 2N3766 (2N3740) and 2N3767 (2N3741) *MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Vol. |
2N3741 |
| Part Number | 2N3741 |
| Manufacturer | Seme LAB |
| Title | Bipolar PNP Device |
| Description | 2N3741 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 4A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (. |
| Features | . |
2N3741 |
| Part Number | 2N3741 |
| Manufacturer | Microsemi Corporation |
| Title | Medium Power PNP Transistors |
| Description | These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial,. |
| Features |
• • • • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3767 (2N3741) Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, . |
2N3741 |
| Part Number | 2N3741 |
| Manufacturer | VPT |
| Title | PNP Power Silicon Transistor |
| Description | 2N3740 & 2N3741 PNP Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/441 • Radiation Tolerant Levels M, D, P, L and R • TO-66 Package • Designed for Power Amplifier and Medium Speed Switching Applications Electrical Characteristics (TA = +25oC u. |
| Features |
• Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/441 • Radiation Tolerant Levels M, D, P, L and R • TO-66 Package • Designed for Power Amplifier and Medium Speed Switching Applications Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutof. |
2N3741 |
| Part Number | 2N3741 |
| Manufacturer | Central Semiconductor Corp |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitte. |
| Features | , TC=150°C (2N3740A) VCE=60V, VBE=1.5V, TC=150°C (2N3741) VCE=60V, VBE=1.5V, TC=150°C (2N3741A) ICBO VCB=Rated VCBO (2N3740, 2N3741) ICBO ICEO ICEO VCB=Rated VCBO (2N3740A, 2N3741A) VCE=40V (2N3740) VCE=40V (2N3740A) ICEO VCE=60V (2N3741) ICEO IEBO IEBO VCE=60V (2N3741A) VEB=7.0V (2N3740, 2N3741) VEB=7.0V (2N3740A, 2N3741A) BVCEO IC=100mA (2N3740, 2N3740A) 60 BVCEO IC=100mA (2N3741, 2N3. |
2N3741 |
| Part Number | 2N3741 |
| Manufacturer | Aeroflex |
| Title | PNP Power Silicon Transistor |
| Description | PNP Power Silicon Transistor 2N3740 & 2N3741 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/441 • TO-66 (TO-213AA) Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipati. |
| Features |
• Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/441 • TO-66 (TO-213AA) Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +25 °C @ TC = +100 °C Operating & Storage Temperature Range Thermal Resistance, Junction-to-Case Symbol VCEO VCBO VEBO IB IC PT Top, Tstg RθJC . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3740 |
VPT |
PNP Power Silicon Transistor |
|
| 2 | 2N3740 |
Microsemi Corporation |
Medium Power PNP Transistors |
|
| 3 | 2N3740 |
Central Semiconductor Corp |
PNP SILICON POWER TRANSISTORS |
|
| 4 | 2N3740 |
Motorola |
MEDIUM-POWER PNP TRANSISTORS |
|
| 5 | 2N3740 |
Aeroflex |
PNP Power Silicon Transistor |
|
| 6 | 2N3740 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 7 | 2N3740A |
Microsemi Corporation |
Medium Power PNP Transistors |
|
| 8 | 2N3740A |
Central Semiconductor Corp |
PNP SILICON POWER TRANSISTORS |
|
| 9 | 2N3740A |
Motorola |
MEDIUM-POWER PNP TRANSISTORS |
|
| 10 | 2N3740A |
Seme LAB |
Bipolar PNP Device |
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Desde 2024. D4U Semiconductor.
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