Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2N3866 |
| Part Number | 2N3866 |
| Manufacturer | Motorola |
| Title | HIGH-FREQUENCY TRANSISTOR |
| Description | 2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation Ca Jq = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO 'c PD T stg Value 30 55 3.5 0.4 5.0 28.6 -65 to +200 Unit Vd. |
| Features | . |
2N3866 |
| Part Number | 2N3866 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | · High Gain Bandwidth Product fT= 500 MHz (Min.) · Low Collector Capacitance; CC = 3 pF Max. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in output, driver or pre-driver stages in VHF and UHF equipment. ABSOLUTE MAXIMUM RATINGS(. |
| Features | ctor-Emitter Breakdown Voltage IC= 5mA; IB= 0 30 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 10Ω 55 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 55 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 3.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 20mA 1.0 V ICEO Collector Cutoff Current VCE= 28V; IB= 0 20 μA hFE-1 DC . |
2N3866 |
| Part Number | 2N3866 |
| Manufacturer | Advanced Power Technology |
| Title | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Description | Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. www.DataSheet.net/ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collecto. |
| Features |
• • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product • 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable. |
2N3866 |
| Part Number | 2N3866 |
| Manufacturer | Microsemi Corporation |
| Title | RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS |
| Description | Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter VCBO Collector-B. |
| Features |
• Silicon NPN, To-39 packaged VHF/UHF Transistor • Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% • 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable f. |
2N3866 |
| Part Number | 2N3866 |
| Manufacturer | Central Semiconductor |
| Title | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Vol. |
| Features | V VCE=30V, VBE(OFF)=1.5V, TC=200°C VEB=3.5V IC=5.0mA, RBE=10Ω IC=500μA IC=5.0mA IE=100μA IC=100mA, IB=20mA VCE=5.0V, IC=50mA (2N3866) VCE=5.0V, IC=50mA (2N3866A) VCE=5.0V, IC=360mA VCE=15V, IC=50mA, f=200MHz (2N3866) VCE=15V, IC=50mA, f=200MHz (2N3866A) VCB=28V, IE=0, f=1.0MHz VCC=28V, Pout=1.0W, f=400MHz (Figure 1) VCC=28V, Pout=1.0W, f=400MHz (Figure 1) MHz MHz pF dB % R2 (15-September 2010) . |
2N3866 |
| Part Number | 2N3866 |
| Manufacturer | Comset Semiconductor |
| Title | Silicon Planar Epitaxial Transistors |
| Description | NPN 2N3866 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol . |
| Features | ion Voltage Test Condition(s) Min 30 55 3.5 10 5 - Typ - Max 20 200 1 Unit µA V V V V VCE=28 V, IB=0 IC=5 mA, IB=0 IC=100 µA, VBE=0 IE=100 µA, IC=0 IC=50 mA, VCE=5 V IC=360 mA, VCE=5 V IC=100 mA IB=20 mA COMSET SEMICONDUCTORS 1/2 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3866 Symbol fT CCBO PO (**) η (**) Ratings Transition Frequency Collector-Base Capacitance Output Power Coll. |
2N3866 |
| Part Number | 2N3866 |
| Manufacturer | Advanced Semiconductor |
| Title | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Description | The ASI 2N3866 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 400 mA 30 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W O O O O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO. |
| Features | Specifications are subject to change without notice. REV. A 1/1 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3863 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2N3864 |
INCHANGE |
NPN Transistor |
|
| 3 | 2N3865 |
INCHANGE |
NPN Transistor |
|
| 4 | 2N3866A |
Semicoa Semiconductor |
NPN Transistor |
|
| 5 | 2N3866A |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW-POWER TRANSISTORS |
|
| 6 | 2N3866A |
Motorola |
HIGH-FREQUENCY TRANSISTOR |
|
| 7 | 2N3866A |
ASI |
NPN Transistor |
|
| 8 | 2N3866A |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 9 | 2N3866A |
Central Semiconductor |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 10 | 2N3867 |
Microsemi Corporation |
Silicon PNP Power Transistors |
|
Desde 2024. D4U Semiconductor.
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