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2N3866 |
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| Part Number | 2N3866 |
| Manufacturer | Inchange Semiconductor |
| Description | · High Gain Bandwidth Product fT= 500 MHz (Min.) · Low Collector Capacitance; CC = 3 pF Max. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed... |
| Features |
ctor-Emitter Breakdown Voltage IC= 5mA; IB= 0
30
V
V(BR)CER Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 10Ω
55
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0
55
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
3.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 20mA
1.0
V
ICEO
Collector Cutoff Current
VCE= 28V; IB= 0
20 μA
hFE-1
DC Current Gain
IC= 50mA ; VCE= 5V
10
200
hFE-2
DC Current Gain
IC= 360mA ; VCE= 5V
5
fT
Current-Gain—Bandwidth Product IC= 50mA; VCE= 15V,f = 200MHz 500
MHz
CC
Output Capacitance
IE= 0; VCB... |
| Document |
 2N3866 Data Sheet
PDF 195.42KB |
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Desde 2024. D4U Semiconductor.
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