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Chino-Excel Technology |
N-Channel MOSFET 30V, 20A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-P |
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Chino-Excel Technology |
P-Channel MOSFET -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. CED10P10/CEU10P10 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) |
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Chino-Excel Technology |
N-Channel MOSFET 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N6G/CEU01N6G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATIN |
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Chino-Excel Technology |
P-Channel MOSFET -30V, -15A, RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-2 |
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Chino-Excel Technology |
N-Channel MOSFET 6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D G S G D S D G CEU SERIES TO-252AA(D-PAK) CED SERIES TO- |
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Chino-Excel Technology |
N-Channel MOSFET |
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Chino-Excel Technology |
N-Channel MOSFET 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO |
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Chino-Excel Technology |
N-Channel MOSFET 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO- |
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Chino-Excel Technology |
N-Channel MOSFET 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED830G/CEU830G PRELIMINARY D D G S CEU SERIES TO-252 |
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Chino-Excel Technology |
N-Channel MOSFET 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N65/CEU01N65 PRELIMINARY D D G S CEU SERIES TO- |
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Chino-Excel Technology |
N-Channel MOSFET 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N65A/CEU01N65A D D G S CEU SERIES TO-252(D-PAK) G |
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Chino-Excel Technology |
N-Channel MOSFET 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N7/CEU01N7 D D G S CEU SERIES TO-252(D-PAK) G D |
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Chino-Excel Technology |
N-Channel MOSFET 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED02N6G/CEU02N6G D D G S CEU SERIES TO-252(D-PAK) G D G |
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Chino-Excel Technology |
N-Channel MOSFET 700V, 3.5A, RDS(ON) = 3.3Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED04N7G/CEU04N7G D D G S CEU SERIES TO-252(D-PAK) G |
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Chino-Excel Technology |
N-Channel MOSFET 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED12N10L/CEU12N10L D D G |
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Chino-Excel Technology |
N-Channel MOSFET 150V, 25A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED25N15L/CEU25N15L D D G S |
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Chino-Excel Technology |
Dual N-Channel MOSFET |
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Chino-Excel Technology |
N-Channel MOSFET |
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Chino-Excel Technology |
N-Channel MOSFET 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED83A3G/CEU83A3G D D G S |
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Chino-Excel Technology |
N-Channel MOSFET 30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED93A3/CEU93A3 PRELIMINAR |
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Desde 2024. D4U Semiconductor.
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