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CEDF640 |
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| Part Number | CEDF640 |
| Manufacturer | Chino-Excel Technology |
| Description | CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current hand... |
| Features |
200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
200
±20
15 60 83 0.66
Operating and Store Temperature Range
TJ,Tstg
-55 to 15... |
| Document |
 CEDF640 Data Sheet
PDF 365.56KB |
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Desde 2024. D4U Semiconductor.
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