CED01N65 |
Part Number | CED01N65 |
Manufacturer | Chino-Excel Technology |
Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. L... |
Features |
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N65/CEU01N65
PRELIMINARY
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 650
Units V V A A W W/ C C
±30
1.2 4.8 35.7 0.29 -55 to 150
Maximum Power Dissipation @ TC = 25 C - D... |
Document |
CED01N65 Data Sheet
PDF 420.10KB |
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