CED93A3 |
Part Number | CED93A3 |
Manufacturer | Chino-Excel Technology |
Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and c... |
Features |
30V, 125A, RDS(ON) = 3.2mΩ @VGS = 10V. RDS(ON) = 7.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED93A3/CEU93A3
PRELIMINARY
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30
Units V V A A W W/ C mJ A C
±20
125 500 57 0.46 800 40 -55 to 150... |
Document |
CED93A3 Data Sheet
PDF 435.97KB |
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