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CEDF630 |
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| Part Number | CEDF630 |
| Manufacturer | Chino-Excel Technology |
| Description | CEDF630/CEUF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current hand... |
| Features |
200V, 7.8A, RDS(ON) = 360mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G D S
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
200
±20
7.8 31.2 50 0.33
Operating and Store Temperature Range
TJ,Tstg
-65 t... |
| Document |
 CEDF630 Data Sheet
PDF 97.79KB |
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Desde 2024. D4U Semiconductor.
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