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CED830G |
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| Part Number | CED830G |
| Manufacturer | Chino-Excel Technology |
| Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Le... |
| Features |
500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED830G/CEU830G
PRELIMINARY
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 500
Units V V A A W W/ C C
±30
4.5 18 68 0.54 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate ... |
| Document |
 CED830G Data Sheet
PDF 417.21KB |
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