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NP6667SR |
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| Part Number | NP6667SR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP6667SR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel： VDS =30V，ID =10A RDS(ON)=16mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Chann. |
| Features | N-channel： VDS =30V，ID =10A RDS(ON)=16mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-15A RDS(ON)=17.5mΩ (typical) @ VGS=-10V RDS(ON)=24mΩ (typical) @ VGS=-4.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested HF Pb Application N-CH P-CH Marking and pin assignment SOP-8 (TOP VIEW) S2 1 G2 2 S1 3 G1 4 NP6667 XXXX YYYY 8 D2 7 D2 6 D1 5 D1 XXXX—Wafer Information YYYY—Quality Code Pch+Nch Complementary MOSFET for DC-FAN H-Bri. |
| Datasheet |
 NP6667SR Data Sheet
PDF 511.82KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP6661BQR |
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| 2 | NP6666D6 |
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| 3 | NP6601AMR |
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30V N And P-Channel Enhancement Mode MOSFET |
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| 4 | NP6608D6 |
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N And P-Channel Enhancement Mode MOSFET |
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| 5 | NP6608QR |
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| 6 | NP6008BSR |
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60V N-Channel Enhancement Mode MOSFET |
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| 7 | NP6008N |
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60V N-Channel Enhancement Mode MOSFET |
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| 8 | NP6020D6-Sn |
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60V N-Channel Enhancement Mode MOSFET |
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| 9 | NP60N03KUG |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
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| 10 | NP60N03SUG |
Renesas |
N-CHANNEL POWER MOS FET |
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Desde 2024. D4U Semiconductor.
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