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NP6008BSR |
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| Part Number | NP6008BSR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. D G S. |
| Features | Marking and pin assignment VDS =60V，ID =8A RDS(ON)(Typ.)=32mΩ @VGS=10V RDS(ON)(Typ.)=39mΩ @VGS=4.5V Excellent gate charge RDS(on) product(FOM) Very low on-resistance RDS(on) 150 °C operating temperature 100% UIS tested Application HF Pb Synchronus Rectification in DC/DC Converters Industrial and Motor Drive applications SOP-8 Top View Bottom View D D D D NP6X0XY0XY8XYY G S S S XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP6008BSR -G Storage Temperature -55°C to +150°C Package SOP-8 Absolute Maximum Ratings (TA=25℃ unless otherwi. |
| Datasheet |
 NP6008BSR Data Sheet
PDF 360.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP6008N |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 2 | NP6020D6-Sn |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 3 | NP60N03KUG |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 4 | NP60N03SUG |
Renesas |
N-CHANNEL POWER MOS FET |
|
| 5 | NP60N04KUG |
Renesas |
N-Channel MOSFET |
|
| 6 | NP60N04MUG |
Renesas |
N-Channel Power MOSFET |
|
| 7 | NP60N04MUK |
Renesas |
N-Channel MOSFET |
|
| 8 | NP60N04NUK |
Renesas |
N-Channel MOSFET |
|
| 9 | NP60N04PDK |
Renesas |
N-Channel Power MOSFET |
|
| 10 | NP60N04VDK |
Renesas |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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