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NP6008N |
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| Part Number | NP6008N |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D G VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω) S RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω) High density cell design for ultra low Rdson. Marking and pin ass. |
| Features | D G VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω) S RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω) High density cell design for ultra low Rdson. Marking and pin assignment Fully characterized avalanche voltage and current. SOT-223 Low gate to drain charge to reduce switching （Top View） losses. Application Power switching application. Hard switched and high frequency circuits. Uninterruptible power supply. Package SOT-223 HF Pb NP6008N XXXX YYYY NP: Natlinear Power 6008: 60V8A N: SOT-223 XXXX: Wafer Lot No. YYYY: Quality Code Ordering Information Part Number NP6008N. |
| Datasheet |
 NP6008N Data Sheet
PDF 0.99MB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP6008BSR |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
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| 2 | NP6020D6-Sn |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 3 | NP60N03KUG |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
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| 4 | NP60N03SUG |
Renesas |
N-CHANNEL POWER MOS FET |
|
| 5 | NP60N04KUG |
Renesas |
N-Channel MOSFET |
|
| 6 | NP60N04MUG |
Renesas |
N-Channel Power MOSFET |
|
| 7 | NP60N04MUK |
Renesas |
N-Channel MOSFET |
|
| 8 | NP60N04NUK |
Renesas |
N-Channel MOSFET |
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| 9 | NP60N04PDK |
Renesas |
N-Channel Power MOSFET |
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| 10 | NP60N04VDK |
Renesas |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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