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NP6020D6-Sn |
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| Part Number | NP6020D6-Sn |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP6020D6-Sn uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Gene. |
| Features |
Marking and pin assignment
VDS =60V，ID =20A
RDS(ON)(Typ.)=18.5mΩ @VGS=10V
RDS(ON)(Typ.)=22 mΩ @VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 150 °C operating temperature 100% UIS tested
Application
Synchronus Rectification in DC/DC Converters Industrial and Motor Drive applications
XXXX—Wafer Information YYYY—Quality Code
Ordering Information
Part Number NP6020D6-Sn-G
Storage Temperature -55°C to +150°C
Package PDFN5 *6-8L-A Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source volta. |
| Datasheet |
 NP6020D6-Sn Data Sheet
PDF 687.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP6008BSR |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 2 | NP6008N |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 3 | NP60N03KUG |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 4 | NP60N03SUG |
Renesas |
N-CHANNEL POWER MOS FET |
|
| 5 | NP60N04KUG |
Renesas |
N-Channel MOSFET |
|
| 6 | NP60N04MUG |
Renesas |
N-Channel Power MOSFET |
|
| 7 | NP60N04MUK |
Renesas |
N-Channel MOSFET |
|
| 8 | NP60N04NUK |
Renesas |
N-Channel MOSFET |
|
| 9 | NP60N04PDK |
Renesas |
N-Channel Power MOSFET |
|
| 10 | NP60N04VDK |
Renesas |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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