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NP6608QR |
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| Part Number | NP6608QR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Chann. |
| Features | N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-10A RDS(ON)=15.3mΩ (typical) @ VGS=-4.5V RDS(ON)=19.7mΩ (typical) @ VGS=-2.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested Marking and pin assignment PDFN3×3-8L （Top View） Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification Package PDFN3×3-8L Ordering Information Part Number NP6608QR-G Storage Temperature -55°C to. |
| Datasheet |
 NP6608QR Data Sheet
PDF 866.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP6608D6 |
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| 3 | NP6661BQR |
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| 4 | NP6666D6 |
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| 6 | NP6008BSR |
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| 7 | NP6008N |
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| 8 | NP6020D6-Sn |
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| 9 | NP60N03KUG |
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| 10 | NP60N03SUG |
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Desde 2024. D4U Semiconductor.
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