Busque con el número de pieza junto con el fabricante o la descripción
NP6601AMR |
Click to view a larger image
| Part Number | NP6601AMR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP6601AMR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel： VDS =30V，ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Chan. |
| Features | N-channel： VDS =30V，ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Channel： VDS =-30V，ID =-4A RDS(ON)=54.4mΩ (typical) @ VGS=-4.5V RDS(ON)=68.5mΩ (typical) @ VGS=-2.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested Marking and pin assignment Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification Package SOT-23-6L Ordering Information Part Number NP6601AMR-G Storage Temperature -55°C to +150°C Package SOT-. |
| Datasheet |
 NP6601AMR Data Sheet
PDF 861.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NP6608D6 |
natlinear |
N And P-Channel Enhancement Mode MOSFET |
|
| 2 | NP6608QR |
natlinear |
20V N And P-Channel Enhancement Mode MOSFET |
|
| 3 | NP6661BQR |
natlinear |
N And P-Channel Enhancement Mode MOSFET |
|
| 4 | NP6666D6 |
natlinear |
N And P-Channel Enhancement Mode MOSFET |
|
| 5 | NP6667SR |
natlinear |
N And P-Channel Enhancement Mode MOSFET |
|
| 6 | NP6008BSR |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 7 | NP6008N |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 8 | NP6020D6-Sn |
natlinear |
60V N-Channel Enhancement Mode MOSFET |
|
| 9 | NP60N03KUG |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 10 | NP60N03SUG |
Renesas |
N-CHANNEL POWER MOS FET |
|
Desde 2024. D4U Semiconductor.
|